We have investigated the magnetoresistance of strongly asymmetric double-wellstructures formed by a thin AlGaAs barrier grown far from the interface in theGaAs buffer of standard heterostructures. In magnetic fields oriented parallelto the electron layers, the magnetoresistance exhibits an oscillationassociated with the depopulation of the higher occupied subband and with thefield-induced transition into a decoupled bilayer. In addition, the increasingfield transfers electrons from the triangular to rectangular well and, at highenough field value, the triangular well is emptied. Consequently, theelectronic system becomes a single layer which leads to a sharp step in thedensity of electron states and to an additional minimum in themagnetoresistance curve.