Abstract

Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm2), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% ± 2.0% and an electrical power density of 3.78 W/cm2 at an emitter temperature of 1,850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.