Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

Abstract

The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in SiGe HBT's for high-performance analog circuit applications. After calibrating SCORPIO to measured data, the effects of germanium profile shape on current gain, cut-off frequency, Early voltage and maximum oscillation frequency are compared over the temperature range of 200-360 K. The impact of aggressive base profile scaling on device performance is also investigated as a function of SiGe film stability.