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Effect of doping of zinc oxide on the hole mobility of po... | ResearchHub
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Effect of doping of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors
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Authors
Maria S. Hammer
3 more
Maria S. Hammer
•
Carsten Deibel
1 more
•
Vladimir Dyakonov
Published
June 25, 2010
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Topics
Materials Science
DOI
10.1016/j.orgel.2010.06.019
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Supporters
Support the authors with ResearchCoin
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Topics
Materials Science
DOI
10.1016/j.orgel.2010.06.019
Other Formats
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