Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia