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Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Laye... | ResearchHub
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Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination
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Authors
Jinxiong Li
10 more
Jinxiong Li
•
S. Ju
8 more
•
Xinwei Wang
Published
June 9, 2024
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Journal
Advanced Functional Materials
Topics
Physics
Materials Science
Engineering
Quantum Mechanics
Materials Chemistry
Show all topics
DOI
10.1002/adfm.202401170
