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Ab initio study of helium behavior near stacking faults i... | ResearchHub
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Ab initio study of helium behavior near stacking faults in 3C-SiC
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Authors
Rongshan Wang
8 more
Rongshan Wang
•
Limin Zhang
6 more
•
Tieshan Wang
Published
July 19, 2024
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Journal
Journal of Physics D Applied Physics
Topics
Physics
Materials Science
Chemistry
Quantum Mechanics
Atomic Physics
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DOI
10.1088/1361-6463/ad6576