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Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect... | ResearchHub
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Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)
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Yeon Kim
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Yeon Kim
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Wei Jiang
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•
Chul‐Ho Lee
Published
July 1, 2024
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Journal
Advanced Materials
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DOI
10.1002/adma.202470233
