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Improving and Modeling Forward Gate ESD Behaviors of p-Ga... | ResearchHub
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Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
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Authors
Yanfeng Ma
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Yanfeng Ma
•
Sheng Li
11 more
•
Weifeng Sun
Published
January 1, 2024
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Journal
IEEE Electron Device Letters
Topics
Physics
Materials Science
Engineering
Quantum Mechanics
Condensed Matter Physics
Show all topics
DOI
10.1109/led.2024.3435328
