The pattern formation in a resist with photo-decomposable quencher (PDQ) by extreme ultraviolet (EUV) lithography was studied with stochastic simulation. The pattern shapes formed in the resist with the conventional quencher (Conv. Q) and the PDQ were compared. It was shown that a resist having a PDQ can suppress an increase in LER and CD errors with an increase in post exposure bake time as compared with the Conv. Q. It was also shown that the PDQ can form patterns with higher sensitivity. The formation of a 7 nm line pattern with a relatively excellent shape could be reproduced, and the effectiveness of the PDQ in the formation of a sub-10 nm pattern could be shown.

Stochastic Simulation Study of Pattern Formation in EUV resists with Photo-Decomposable Quenchers