Abstract

High-entropy amorphous materials have recently demonstrated exceptional radiation resistance, showing potential as candidate materials for nuclear industry applications. This study synthesized equi-atomic Al20Cr20Fe20Mo20Ti20 high-entropy amorphous thin films with a thickness of about 499 nm using magnetron sputtering. The prepared films were subjected to low dose, 0.5 MeV He+ ion irradiation, with varying irradiation damage ranging from 0.01 to 0.1 displacement per atom (dpa). Increasing the irradiation dose led to a decrease in the radius of the inner diffraction halo (r) and an increase in the crystal-like order, indicating an irradiation-induced structural relaxation process within the amorphous matrix. This relaxation results in more efficient atomic packing, yielding a denser amorphous structure and enhanced hardness of AlCrFeMoTi high-entropy amorphous thin films. This study demonstrates that AlCrFeMoTi high-entropy amorphous thin films exhibit remarkable radiation resistance, with stable microstructure and mechanical properties under He+ irradiation, making them promising candidates for applications in the nuclear industry.