Paper
Paper
Search...
Search ResearchHub...
Ctrl+K
New
Home
Browse
Earn
Fund
RH Journal
Notebook
Lists
Leaderboard
RSC
USD
Changelog
Terms
Privacy
Issues
Docs
Support
Foundation
About
Annealing Process on MOS channel Properties for Quasi‐Ver... | ResearchHub
Paper
Paper
Search...
Search ResearchHub...
Ctrl+K
New
Home
Browse
Earn
Fund
RH Journal
Notebook
Lists
Leaderboard
RSC
USD
Changelog
Terms
Privacy
Issues
Docs
Support
Foundation
About
Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET
0
Authors
Jiaan Zhou
20 more
Jiaan Zhou
•
Bosen Liu
18 more
•
Xinping Zhang
Published
June 1, 2024
Paper
Conversation
0
Reviews
0
Bounties
0
Sign in to comment
Add a comment...
Best
Supporters
Support the authors with ResearchCoin
Tip RSC
Journal
physica status solidi (RRL) - Rapid Research Letters
Topics
Physics
Materials Science
Engineering
Optics
Condensed Matter Physics
Show all topics
DOI
10.1002/pssr.202400075
