Abstract

In the VLSI design main apprehensions are propagation delay and power optimization. This paper presents a comparison between the 6T SRAM (static random-access memory) cell and the 8T SRAM cell, utilizing FinFET 18 nm technology. The experimental results include the Power Delay Product (PDP) for read and write operations. It is observed that the PDP values for both read and write mechanisms of the 6T SRAM cell are lower than those of the 8T SRAM cell across different voltage levels. The specific PDP values for the 6T SRAM cell in the read and write mechanism are provided for reference, For 1 V =50.14×10 -18 0.9 V = 42.72×10 -18 0.8 V= 43.27×10 -18 0.7 V= 37.10×10 -18 0.6 V= 28.78×10 -18 and 0.5 V = 14.47×10 -18 while 1 V =2690.04×10 -21 , 0.9 V =1992.15×10 -21 , 0.8 V= 1431.87×10 -21 , 0.7 V= 991.74×10 -21 , 0.6 V= 655.25×10 -21 and 0.5 V = 408.38×10 -21 . PDP values on 8T in Read and Write operation have been listed, For 1 V =50.01×10 -18 , 0.9 V = 54.25×10 -18 , 0.8 V= 50.28×10 -18 , 0.7 V= 40.88×10 -18 , 0.6 V= 29.16×10 -18 and 0.5 V = 17.50×10 -18 . while 1 V =6999.60×10 -21 , 0.9 V =5309.8×10 -21 , 0.8 V= 3991.4×10 -21 , 0.7 V= 2827.3×10 -21 , 0.6 V= 1943.6×10 -21 and 0.5 V = 1249.9×10 -21 . Both the 6T and 8T SRAM cell configurations demonstrate suitability for deployment within healthcare and biomedical contexts, offering potential utilization in adiabatic biomedical applications as well.