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Low Temperature Wafer Level Hybrid Bonding Enabled by Adv... | ResearchHub
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Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation
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Authors
Fumihiro Inoue
11 more
Fumihiro Inoue
•
Atsushi Nagata
9 more
•
Jiho Kang
Published
May 28, 2024
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Topics
Physics
Materials Science
Engineering
Electrical And Electronic Engineering
Automotive Engineering
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DOI
10.1109/ectc51529.2024.00020
