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Transport properties of multilayer NbxMo1−xS2/MoS2 in-pla... | ResearchHub
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Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate
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Authors
Shota Toida
7 more
Shota Toida
•
Shota Yamaguchi
5 more
•
Yasumitsu Miyata
Published
June 24, 2024
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Journal
Applied Physics Letters
Topics
Physics
Materials Science
Chemistry
Organic Chemistry
Materials Chemistry
Show all topics
DOI
10.1063/5.0209432
