P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

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Journal

SID Symposium Digest of Technical Papers

Topics

Engineering

Materials Science

Materials Chemistry

Electrical And Electronic Engineering

Stress (Linguistics)

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DOI

10.1002/sdtp.17165