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Universal strain engineering for enhancing the hole mobil... | ResearchHub
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Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors
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Authors
Yaoqiao Hu
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Yaoqiao Hu
•
Kyeongjae Cho
Published
July 2, 2024
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Journal
Journal of Applied Physics
Topics
Physics
Materials Science
Chemistry
Quantum Mechanics
Organic Chemistry
Show all topics
DOI
10.1063/5.0210247
