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Vacancy-Type Defects and Oxygen Incorporation in NiAl for... | ResearchHub
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Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
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Authors
Akira Uedono
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Akira Uedono
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Claudia Fleischmann
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Shoji Ishibashi
Published
July 10, 2024
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Journal
ACS Applied Electronic Materials
Topics
Physics
Materials Science
Chemistry
Engineering
Nuclear Physics
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DOI
10.1021/acsaelm.4c00877
