Abstract

The charge carrier mobility in tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light‐emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i‐MIS‐CELIV). By employing the injection current i‐MIS‐CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS‐CELIV is measured. The i‐MIS‐CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i‐MIS‐CELIV and MIS‐CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time‐scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i‐MIS‐CELIV (photo‐i‐MIS‐CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo‐i‐MIS‐CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron‐blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation.