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A Quantitative Analytical Model of Paralleled SiC MOSFETs... | ResearchHub
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A Quantitative Analytical Model of Paralleled SiC MOSFETs for Calculating Unbalanced Switching Currents and Energy
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Authors
Jianwei Lv
5 more
Jianwei Lv
•
Cai Chen
3 more
•
Yong Kang
Published
January 1, 2024
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Journal
IEEE Transactions on Power Electronics
Topics
Physics
Materials Science
Engineering
Quantum Mechanics
Electrical And Electronic Engineering
Show all topics
DOI
10.1109/tpel.2024.3448201
