Abstract

In this work, we demonstrate SiC/high-κ MOS capacitors with low leakage density of 10 -8 Acm -2 , good device uniformity, good thermal stability (> 800 °C), and longer oxide lifetime > 10 4 s simultaneously. This is enabled by using atomic layer deposition (ALD) processed- HfAlO as the gate dielectric with a thickness of 35 nm, smooth surface (RMS roughness =0.70 nm), and high-quality SiC/ HfAlO interface with interface density (D it ) of 8×10 10 eV -1 cm -2 .