High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (t<sub>tddb</sub>≥ 10<sup>4</sup>s), and High Thermal Stability (≥ 800 °C)

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Journal

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

Topics

Physics

Materials Science

Engineering

Electrical And Electronic Engineering

Electronic, Optical And Magnetic Materials

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DOI

10.4028/p-a6qptx

License

CC-BY