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High performance 2T0C DRAM cells based on atomic-layer-de... | ResearchHub
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High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs
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Authors
Wenjie Xiong
5 more
Wenjie Xiong
•
Binbin Luo
3 more
•
Shi‐Jin Ding
Published
August 20, 2024
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Journal
Science China Information Sciences
Topics
Computer Science
Materials Science
Electrical And Electronic Engineering
Atomic Layer Deposition
Nanotechnology
Show all topics
DOI
10.1007/s11432-024-4112-x
