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A Novel Method for Extracting Asymmetric Source and Drain... | ResearchHub
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A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors
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Authors
Seongwoo Yoo
19 more
Seongwoo Yoo
•
Yunsung Lee
17 more
•
Jae Song
Published
June 16, 2024
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Topics
Computer Science
Materials Science
Engineering
Electrical And Electronic Engineering
Voltage
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DOI
10.1109/vlsitechnologyandcir46783.2024.10631544
