Room-temperature Ferromagnetic Semiconductor Fe-doped β-Ga2O3 Thin Films with High Saturation Magnetization and Low Coercivity
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Authors
Dan Gong•Xi Zhang•Gang Xiang
Published
January 1, 2024
Abstract
Emergent ferromagnetism in β-Ga2O3 with ultra-wide bandwidth and high electrical breakdown strength offers exciting opportunities in fabricating robust spintronic devices. One pertinent obstacle in the material has been the low...
