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A 2.5D Multichip SiC MOSFET Power Module With Low Parasit... | ResearchHub
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A 2.5D Multichip SiC MOSFET Power Module With Low Parasitic Inductance and High Dynamic Current Sharing Performance
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Authors
Zexiang Zheng
5 more
Zexiang Zheng
•
Jianwei Lv
3 more
•
Yong Kang
Published
January 1, 2024
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Journal
IEEE Transactions on Power Electronics
Topics
Physics
Materials Science
Engineering
Quantum Mechanics
Electrical And Electronic Engineering
Show all topics
DOI
10.1109/tpel.2024.3462749
