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Study on the optoelectronic properties of g-ZnO/Graphene ... | ResearchHub
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Study on the optoelectronic properties of g-ZnO/Graphene heterojunction by doping and point vacancy defects
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Authors
Junqing Wen
3 more
Junqing Wen
•
Miaomiao Wang
1 more
•
Jian‐Min Zhang
Published
May 29, 2024
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Journal
Physics Letters A
Topics
Physics
Materials Science
Materials Chemistry
Electronic, Optical And Magnetic Materials
Heterojunction
Show all topics
DOI
10.1016/j.physleta.2024.129632
