Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy

Abstract

Layer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphene-based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB-stacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking.