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Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Tran... | ResearchHub
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Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing
0
Authors
Linqu Luo
18 more
Linqu Luo
•
Hendrik Faber
16 more
•
Thomas Anthopoulos
Published
June 16, 2024
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Journal
Advanced Functional Materials
Topics
Biology
Materials Science
Chemistry
Engineering
Paleontology
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DOI
10.1002/adfm.202406044
License
CC-BY
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Journal
Advanced Functional Materials
Topics
Biology
Materials Science
Chemistry
Engineering
Paleontology
Show all topics
DOI
10.1002/adfm.202406044
License
CC-BY
