100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Authors

Yu-Ming Lin

Published

February 5, 2010

Abstract

The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Supporters

Support the authors with ResearchCoin

Journal

Science

Topics

DOI

10.1126/science.1184289

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Authors

Yu-Ming Lin

Published

February 5, 2010

Abstract

The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Supporters

Support the authors with ResearchCoin

Journal

Science

Topics

DOI

10.1126/science.1184289

Paper

Paper

Paper

Paper

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Abstract

Supporters

Journal

Topics

DOI

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Abstract

Supporters

Journal

Topics

DOI