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State-Independent Low Resistance Drift SiSbTe Phase Chang... | ResearchHub
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State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
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Authors
Huai‐Yu Cheng
12 more
Huai‐Yu Cheng
•
Z. Liu
10 more
•
Hsiang-Lan Lung
Published
June 16, 2024
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Topics
Computer Science
Materials Chemistry
Physics
Electrical And Electronic Engineering
Phase-Change Memory
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DOI
10.1109/vlsitechnologyandcir46783.2024.10631376
