Abstract

Reflectance data are presented for Si, Ge, GaP, GaAs, InAs, and InSb in the range of photon energies between 1.5 and 25 eV. The real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations. The results can be described in terms of interband transitions and plasma oscillations. A theory based on the frequency-dependent dielectric constant in the random phase approximation is presented and used to analyze these data above 12 eV, where the oscillator strengths coupling the valence and conduction bands are practically exhausted. The theory predicts and the experiments confirm essentially free electron-like behavior before the onset of $d$-band excitations and a plasma frequency modified from that of free electrons due to oscillator strength coupling between valence and $d$ bands and $d$-band screening effects. These complications are absent in Si. The energy loss functions obtained from optical and characteristic energy loss experiments are also found to be in good agreement. Arguments for interpreting structure in the reflectance curves above 16 eV in terms of $d$-band excitations are given.