Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Abstract

Fully transparent thin-film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess “hard saturation” with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V–1 s–1. The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.