Abstract

Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO3 precursor concentration on the growth substrate to explore its sensitivity to the resultant MoS2 domain growth within a relatively uniform temperature range. We find that the shape of MoS2 domains is highly dependent upon the spatial location on the silicon substrate, with variation from triangular to hexagonal geometries. The shape change of domains is attributed to local changes in the Mo:S ratio of precursors (1:>2, 1:2, and 1:<2) and its influence on the kinetic growth dynamics of edges. These results improve our understanding of the factors that influence the growth of MoS2 domains and their shape evolution.