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Trap engineering in bismuth activated NaLu(Gd)GeO4 persistent phosphors by doping Ln3+
Radiation
Materials Chemistry
Electrical And Electronic Engineering
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Authors
Xiaochun Hou
,
Wan Teng
Dangli Gao
,
Xiangyu Zhang
,
Chaoyang Jia
,
Chengxue Du
,
Rui-Peng Chai
,
Qing Pang
,
Sining Yun
+7 authors
,
Yuhua Wang
Journal
Materials Today Chemistry
Published
Jun 24, 2024
DOI
10.1016/j.mtchem.2024.102170
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