Abstract

Light and elevated temperature induced degradation (LeTID) can induce high power losses in photovoltaic modules built from various types of silicon wafers. After the industry's rapid transition from Boron- to Gallium-doping, it is still unclear how the new dopant atom affects the degradation process and why it entails an apparently higher resistance to LeTID. We treat identically processed Gallium-doped Czochralski silicon wafers at 16 different conditions by screening temperature and minority charge carrier density (in the following "injection"). The illumination source is regulated to keep the injection constant at each condition. This method allows for an improved quantitative analysis of the LeTID kinetics based on effective lifetime measurements. Our results show that Gallium-doping shifts the equilibrium between the formation of LeTID defects and their temporary recovery (TR) to the latter, leading to a reduced degradation extent at temperatures up to 80 °C. The efficacy of this TR-induced LeTID suppression depends delicately on both temperature and injection which explains why Gallium-doped silicon appears to be LeTID-immune at high illumination intensities. By accounting for the influence of TR, we extract activation energies and injection exponents that relate to the dominant defect transitions separately, revealing a large discrepancy to effective values reported in literature. The increased accuracy of our kinetic parameters enhances the reliability of existing efficiency models. Finally, we find that a degradation as expected under field conditions can be probed at a 100-fold accelerated rate in the lab. By shining light on LeTID kinetics in Gallium-doped silicon, we explain the dopant atoms' influence on the degradation behavior, establish a basis for precise yield modelling and formulate guidelines for accelerated test protocols.