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Origin of defect-insensitive emission probability in In-c... | ResearchHub
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
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Authors
Shigefusa Chichibu
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Shigefusa Chichibu
•
Akira Uedono
19 more
•
Takayuki Sota
Published
September 3, 2006
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Journal
Nature Materials
Topics
Physics
Materials Science
Optics
Condensed Matter Physics
Electrical And Electronic Engineering
Show all topics
DOI
10.1038/nmat1726
