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Improved inversion channel mobility for 4H-SiC MOSFETs fo... | ResearchHub
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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
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Authors
Gil Chung
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Gil Chung
•
C. Tin
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•
John Palmour
Published
April 1, 2001
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Journal
IEEE Electron Device Letters
Topics
Physics
Materials Science
Chemistry
Engineering
Physical Chemistry
Show all topics
DOI
10.1109/55.915604
