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10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf&... | ResearchHub
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10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation
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Authors
B. Govoreanu
20 more
B. Govoreanu
•
A. Fantini
18 more
•
M. Jurczak
Published
December 1, 2011
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Topics
Computer Science
Materials Science
Physics
Engineering
Quantum Mechanics
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DOI
10.1109/iedm.2011.6131652