Abstract Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm 2 V −1 s −1 at room temperature, higher than that (∼13,000 2 V −1 s −1 ) with exfoliated h-BN. By placing additional h-BN on a SiO 2 /Si substrate for a MoS 2 (WSe 2 ) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance