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Back Gated Multilayer InSe Transistors with Enhanced Carr... | ResearchHub
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Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
0
Authors
Wei Feng
3 more
Wei Feng
•
Wei Zheng
1 more
•
PingAn Hu
Published
August 28, 2014
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Journal
Advanced Materials
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DOI
10.1002/adma.201402427
