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High Mobility MoS2 Transistor with Low Schottky Barrier C... | ResearchHub
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High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
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Authors
Jingli Wang
11 more
Jingli Wang
•
Kai Zhang
9 more
•
Wen‐Wei Wu
Published
July 8, 2016
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Journal
Advanced Materials
Topics
Physics
Materials Science
Engineering
Materials Chemistry
Electrical And Electronic Engineering
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DOI
10.1002/adma.201602757
