Abstract

The electron affinity (EA) $\ensuremath{\chi}$ of single crystal diamond (100) is determined as a function of hydrogen and oxygen coverage by a combination of work function and photoemission experiments. For the fully hydrogenated (100)-$(2\ifmmode\times\else\texttimes\fi{}1):\mathrm{H}$ surface an EA of $\ensuremath{-}1.3 \mathrm{eV}$ and for the oxidized surface C(100)-$(1\ifmmode\times\else\texttimes\fi{}1):\mathrm{O}$ $\ensuremath{\chi}=+1.7 \mathrm{eV}$ are obtained. These are the lowest and the highest electron affinities, respectively, ever reported for any diamond surface. The variation in $\ensuremath{\chi}$ with O and H coverage is well described by a simple dipole model provided that the depolarization is properly taken into account for high adsorbate densities. This analysis favors the bridge position (etherlike) for oxygen on C(100). By mixing H and O adsorbates on a microscopic scale the EA of C(100) can be adjusted at will over 3 eV between the extreme values without jeopardizing the chemical passivation of the diamond surface afforded by H or O termination.