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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length | ResearchHub
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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
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Authors
Amirhasan Nourbakhsh
13 more
Amirhasan Nourbakhsh
•
Ahmad Zubair
11 more
•
Tomás Palacios
Published
November 7, 2016
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Journal
Nano Letters
Topics
Engineering
Materials Science
Medicine
Pathology
Materials Chemistry
Show all topics
DOI
10.1021/acs.nanolett.6b03999
