Abstract

Advanced MaterialsVolume 19, Issue 5 p. 688-692 Communication Interface-Controlled, High-Mobility Organic Transistors† O. D. Jurchescu, O. D. Jurchescu Solid State Chemistry Laboratory, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorM. Popinciuc, M. Popinciuc Physics of Nanodevices, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorB. J. van Wees, B. J. van Wees Physics of Nanodevices, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorT. T. M. Palstra, T. T. M. Palstra t.t.m.palstra@rug.nl Solid State Chemistry Laboratory, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this author O. D. Jurchescu, O. D. Jurchescu Solid State Chemistry Laboratory, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorM. Popinciuc, M. Popinciuc Physics of Nanodevices, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorB. J. van Wees, B. J. van Wees Physics of Nanodevices, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this authorT. T. M. Palstra, T. T. M. Palstra t.t.m.palstra@rug.nl Solid State Chemistry Laboratory, Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsSearch for more papers by this author First published: 01 February 2007 https://doi.org/10.1002/adma.200600929Citations: 322 † We thank P. Blom, M. Mulder, and J. Harkema for the use of their evaporation equipment. This work was supported by the MSCplus (Materials Science Center) and FOM (Stichting voor Fundamenteel Onderzoek der Materie). AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented. Citing Literature Volume19, Issue5March, 2007Pages 688-692 RelatedInformation