Abstract

Advanced MaterialsVolume 18, Issue 11 p. 1445-1448 Communication Large Electric Polarization and Exchange Bias in Multiferroic BiFeO3† J. Dho, J. Dho Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorX. Qi, X. Qi xq204@cam.ac.uk Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorH. Kim, H. Kim The Nanoscience Centre, University of Cambridge, 11 JJ Thomson Avenue, Cambridge, CB3 0FF, UK ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, KoreaSearch for more papers by this authorJ. L. MacManus-Driscoll, J. L. MacManus-Driscoll Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorM. G. Blamire, M. G. Blamire Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this author J. Dho, J. Dho Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorX. Qi, X. Qi xq204@cam.ac.uk Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorH. Kim, H. Kim The Nanoscience Centre, University of Cambridge, 11 JJ Thomson Avenue, Cambridge, CB3 0FF, UK ATD Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Yongin City, KoreaSearch for more papers by this authorJ. L. MacManus-Driscoll, J. L. MacManus-Driscoll Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this authorM. G. Blamire, M. G. Blamire Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UKSearch for more papers by this author First published: 26 April 2006 https://doi.org/10.1002/adma.200502622Citations: 313 † This work was supported by Samsung Electronics and the UK Engineering and Physical Sciences Research Council. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Low-leakage BiFeO3 films have been grown with saturated ferroelectric hysteresis loops (see figure) and a very large remanent polarization. The antiferromagnetic nature of BiFeO3 films is confirmed by the appearance of an exchange bias in BiFeO3-based spin-valve multilayers. The results imply that there is potential for room-temperature applications of BiFeO3 that combine ferroelectric and antiferromagnetic functionality. Citing Literature Volume18, Issue11June, 2006Pages 1445-1448 RelatedInformation