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Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC ... | ResearchHub
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Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop
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Authors
Hao Fu
13 more
Hao Fu
•
Xiangrui Fan
11 more
•
Weifeng Sun
Published
January 1, 2024
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Journal
IEEE Transactions on Electron Devices
Topics
Engineering
Materials Science
Electrical And Electronic Engineering
Atomic And Molecular Physics, And Optics
Mechanical Engineering
Show all topics
DOI
10.1109/ted.2024.3482250