Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 for the program/erase ratio and displaying a high mobility of ~220 cm2/(V·s). Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

MoS2 Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel