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Electronic Modulation Caused by Interfacial Ni‐O‐M (M=Ru,... | ResearchHub
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Electronic Modulation Caused by Interfacial Ni‐O‐M (M=Ru, Ir, Pd) Bonding for Accelerating Hydrogen Evolution Kinetics
0
Authors
Liming Deng
7 more
Liming Deng
•
Shao‐Chu Huang
5 more
•
Shengjie Peng
Published
August 24, 2021
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Journal
Angewandte Chemie International Edition
Topics
Physics
Materials Science
Chemistry
Engineering
Chemical Physics
Show all topics
DOI
10.1002/anie.202110374
