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Investigation of ultrasmall sidewall-insulated GaN via wi... | ResearchHub
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Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs
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Authors
Yang Li
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Yang Li
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Tao Tao
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•
Jie Sun
Published
November 1, 2024
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Journal
Optics Communications
Topics
Physics
Materials Science
Optics
Materials Chemistry
Condensed Matter Physics
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DOI
10.1016/j.optcom.2024.131332
